Technology Core

The third generation semiconductor gallium nitride (GaN), a compound of nitrogen and gallium, is a direct energy gap semiconductor. The structure of this compound is similar to fibrous zinc ore and is hard. the energy gap of GaN is wide, 3.4 electron volts, and can be used in high power, short wavelength optoelectronic components. As a third-generation semiconductor material, GaN has unique advantages compared with the low speed of silicon carbide (SiC) and the low breakdown voltage of gallium arsenide (GaAs), among other characteristics. Due to its large forbidden band width and high thermal conductivity, GaN devices can theoretically operate at temperatures above 300°C and can carry higher energy density and higher reliability; its large forbidden band width and insulation-breaking electric field make the devices have high breakdown voltage and low on-resistance, which is conducive to improving the overall energy efficiency of the devices; high electron mobility and high saturation speed allow the devices to operate at high speed.

Our company is an IDM model company.

The main core technology of the company is in GaN material epitaxy and device preparation.

Material epitaxy: mastering the core technologies of device epitaxial structure design, epitaxial growth debugging and testing, etc. We can complete the design and growth debugging of high-end epitaxial structures (such as blue-green laser structure, UV light-emitting diode structure and RF device structure, etc.).

Device preparation: master the core technologies of device structure design and process debugging, be able to independently design device structure and debug process technology, achieve high yield process technology and high performance devices.